SSM3K44FS 2014-03-01 1 toshiba field effect transistor silicon n channel mos type SSM3K44FS high speed switching applications analog switching applications ? compact package suitable for high-density mounting ? low on-resistance : r ds(on) = 4.0 ? (max) (@v gs = 4 v) : r ds(on) = 7.0 ? (max) (@v gs = 2.5 v) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v dc i d 100 drain current pulse i dp 200 ma drain power dissipation (ta = 25c) p d (note 1) 150 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on an fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad : 0.36mm 2 3) marking equivalent circuit handling precaution when handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricit y. operators should wear anti-static cl othing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm jedec D jeita D toshiba 2-2h1b weight: 2.4 mg (typ.) n t 1 2 3 12 3 start of commercial production 2009-12
SSM3K44FS 2014-03-01 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 14 v, v ds = 0 v ? ? 1 a drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 v 30 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.8 ? 1.5 v forward transfer admittance |y fs | v ds = 3 v, i d = 10 ma 25 ? ? ms i d = 10 ma, v gs = 4 v ? 2.2 4.0 drain-source on resistance r ds (on) i d = 10 ma, v gs = 2.5 v ? 4.0 7.0 input capacitance c iss ? 8.5 ? reverse transfer capacitance c rss ? 5.3 ? output capacitance c oss v ds = 3 v, v gs = 0 v, f = 1 mhz ? 9.4 ? pf turn-on time t on ? 50 ? switching time turn-off time t off v dd = 5 v, i d = 10 ma, v gs = 0 to 5 v ? 200 ? ns switching time test circuit (a) test circuit (b) v in precaution let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to be low (0.1ma for the SSM3K44FS). then, for normal switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on). take this into consideration when using the device v dd = 5 v duty 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd out in 5 v 0 10 s 50 r l (c) v out t on 90% 10% 0 v 5 v 10% 90% t off t r t f v dd v ds ( on )
SSM3K44FS 2014-03-01 3 ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) drain-source voltage v ds (v) i d ? v ds drain current i d (ma) 0 0 100 250 12 1.5 0.5 50 150 200 v gs = 2.1 v 2.3 2.5 2.7 common source ta = 25c 3 4 10 i d ? v gs drain current i d (ma) gate-source voltage v gs (v) 0.01 0 1 1000 24 3 1 0.1 10 100 ta = 100c common source v ds = 3 v ? 25c 25c drain current i d (ma) r ds (on) ?i d drain-source on-resistance r ds (on) ( ) 4 v vgs = 2.5 v 0 0 4 10 80 200 160 40 2 6 8 120 common source ta = 25c drain-source on-resistance r ds (on) ( ) gate-source voltage v gs (v) r ds (on) ? v gs 0 0 2 6 410 8 2 1 4 5 6 3 25c ta = 100c ? 25c common source i d = 10 ma drain-source on-resistance r ds (on) ( ) ambient temperature ta (c) r ds (on) ? ta 0 ? 25 2 8 50 150 125 0 1 5 6 75 4 4 v v gs = 2.5 v common source i d = 10 ma 3 7 25 100 0 ? 25 0.4 2 50 150 125 0 0.2 1.2 1.6 75 1 common source i d = 0.1 ma v ds = 3 v 0.8 1.8 25 100 0.6 1.4
SSM3K44FS 2014-03-01 4 drain current i d (ma) ? y fs ? ? i d forward transfer admittance | y fs | (ms) 1 1 10 30 1000 100 1000 10 100 3 5 50 300 500 common source v ds = 3 v ta = 25c i dr ? v ds drain reverse current i dr (ma) drain-source voltage v ds (v) 0 0 100 250 ? 1.4 ? 0.4 50 150 200 ? 0.2 ? 0.6 ? 0.8 ? 1 ? 1.2 common source v gs = 0 v ta = 25c g d s i dr switching time t (ns) drain current i d (ma) t ? i d 10 0.1 100 300 10000 1000 100 1 10 30 50 500 3000 5000 common source v dd = 3 v v gs = 0 to 2.5 v ta = 2 5 c t r t on t f t off ambient temperature ta (c) p d ? ta drain power dissipation p d (mw) 0 0 100 250 160 40 50 150 200 20 60 80 100 140 120 mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.36 mm 2 3) capacitance c (pf) drain-source voltage v ds (v) c ? v ds 0.1 0.1 1 3 100 10 100 1 10 0.3 0.5 5 30 50 common source v gs = 0 v f = 1 mhz ta = 25c c rss c oss c iss drain current i d (ma) t ? i d switching time t (ns) 10 0.1 100 300 10000 1000 100 1 10 30 50 500 3000 5000 common source v dd = 5 v v gs = 0 to 5 v ta = 25c t r t on t f t off
SSM3K44FS 2014-03-01 5 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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